www.irf.com 1 parameter maximum units i d @ t a = 25c continuous drain current, v gs @ -4.5v -5.3 a i d @ t a = 70c -4.3 i dm pulsed drain current -43 p d @t a = 25c power dissipation 2.0 w p d @t a = 70c 1.3 linear derating factor 16 mw/c v gs gate-to-source voltage 12 v dv/dt peak diode recovery dv/dt -5.0 v/ns t j, t stg junction and storage temperature range -55 to +150 c l co-packaged hexfet ? power mosfet and schottky diode l ideal for buck regulator applications l p-channel hexfet l low v f schottky rectifier l generation 5 technology l so-8 footprint IRF7322D1 fetky ? ? ? ? ? mosfet / schottky diode notes: repetitive rating; pulse width limited by maximum junction temperature (see figure 9) i sd -2.9a, di/dt -77a/s, v dd v (br)dss , t j 150c a pulse width 300s; duty cycle 2% ? surface mounted on fr-4 board, t 10sec. parameter maximum units r q ja junction-to-ambient ? 62.5 c/w absolute maximum ratings (t a = 25c unless otherwise noted) thermal resistance ratings description v dss = -20v r ds(on) = 0.058 w schottky vf = 0.39v the fetky family of co-packaged mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. generation 5 hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combinining this technology with international rectifier's low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so-8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 1 2 3 4 5 6 7 a a s g d d k k so-8 3/17/99 pd- 91705a
IRF7322D1 2 www.irf.com parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 v v gs = 0v, i d = -250a r ds(on) static drain-to-source on-resistance 0.049 0.062 v gs = -4.5v, i d = -2.9a ? 0.082 0.098 v gs = -2.7v, i d = -1.5a ? v gs(th) gate threshold voltage -0.70 v v ds = v gs , i d = -250a g fs forward transconductance 5.9 s v ds = -10v, i d = -1.5a i dss drain-to-source leakage current -1.0 v ds = -16v, v gs = 0v -25 v ds = -16v, v gs = 0v, t j = 55c i gss gate-to-source forward leakage 100 v gs = -12.0v gate-to-source reverse leakage -100 v gs = 12.0v q g total gate charge 19 29 i d = -2.9a q gs gate-to-source charge 4.0 6.1 nc v ds = -16v q gd gate-to-drain ("miller") charge 7.7 12 v gs = -4.5v (see figure 6) a t d(on) turn-on delay time 15 22 v dd = -10v t r rise time 40 60 i d = -2.9a t d(off) turn-off delay time 42 63 r g = 6.0 w t f fall time 49 73 r d = 3.4 w a c iss input capacitance 780 v gs = 0v c oss output capacitance 470 pf v ds = -15v c rss reverse transfer capacitance 240 ? = 1.0mhz (see figure 5) mosfet electrical characteristics @ t j = 25c (unless otherwise specified) w a na ns parameter min. typ. max. units conditions i s continuous source current (body diode) -2.5 a i sm pulsed source current (body diode) -21 v sd body diode forward voltage -1.2 v t j = 25c, i s = -2.9a, v gs = 0v t rr reverse recovery time (body diode) 47 71 ns t j = 25c, i f = -2.9a q rr reverse recovery charge 49 73 nc di/dt = 100a/s a mosfet source-drain ratings and characteristics 2 parameter max. units. conditions i f(av) max. average forward current 2.7 50% duty cycle. rectangular wave, t a = 25c 2 t a = 70c i sm max. peak one cycle non-repetitive 120 5s sine or 3s rect. pulse following any rated surge current 11 10ms sine or 6ms rect. pulse load condition & with v rrm applied a a schottky diode maximum ratings parameter max. units conditions v fm max. forward voltage drop 0.50 i f = 1.0a, t j = 25c 0.62 i f = 2.0a, t j = 25c 0.39 i f = 1.0a, t j = 125c 0.57 i f = 2.0a, t j = 125c . i rm max. reverse leakage current 0.02 v r = 20v t j = 25c 8 t j = 125c c t max. junction capacitance 92 pf v r = 5vdc ( 100khz to 1 mhz) 25c dv/dt max. voltage rate of charge 3600 v/ s rated v r schottky diode electrical specifications v ma see fig. 14
IRF7322D1 www.irf.com 3 2 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 1 10 100 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 v = -10v 20s pulse width ds -v , gate-to-source volta g e (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 20 s pulse width t = 25 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -1.50v 0.1 1 10 100 0.1 1 10 20 s pulse width t = 150 c j top bottom vgs -7.50v -4.50v -4.00v -3.50v -3.00v -2.70v -2.00v -1.50v -v , drain-to-source volta g e (v) -i , drain-to-source current (a) ds d -1.50v 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 j t , junction temperature (c) r , drain-to-source o n resistance ds(on) (normalized) a i = -2.9a v = -4.5v d gs power mosfet characteristics
IRF7322D1 4 www.irf.com 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j power mosfet characteristics fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0 200 400 600 800 1000 1200 1400 1 10 100 c, capacitance (pf) a ds -v , drain-to-source volta g e ( v ) v = 0v , f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 2 4 6 8 10 0 5 10 15 20 25 30 g gs a -v , gate-to-source voltage (v) q , total gate char g e ( nc ) i = -2.9a v = -16v d ds fig 7. typical source-drain diode forward voltage 1 10 100 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source volta g e (v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
IRF7322D1 www.irf.com 5 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 0.50 single pulse (thermal response) r ds (on) , drain-to-source on resistance ( w ) r ds (on) , drain-to-source on resistance ( w ) fig 10. typical on-resistance vs. drain current fig 11. typical on-resistance vs. gate voltage fig 9. maximum effective transient thermal impedance, junction-to-ambient power mosfet characteristics 0.0 0.2 0.4 0.6 0.8 0 4 8 121620 a -i , drain current (a) d v = -4.5v gs v = -2.7v gs 0.03 0.04 0.05 0.06 0.07 0.08 0.0 2.0 4.0 6.0 8.0 a gs v , gate-to-source voltage (v) i = -5.3a d
IRF7322D1 6 www.irf.com schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage reverse current - i r (ma) fig. 12 - typical forward voltage drop characteristics 0.0001 0.001 0.01 0.1 1 10 100 0 4 8 12 16 20 r 100c 75c 50c 25c reverse voltage - v (v) 125c a t = 150c j 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 3.0 f(av) a avera g e forw ard c urrent - i ( a ) allowable am bient tem perature - (c) d = 3/4 d = 1/2 d =1/3 d = 1/4 d = 1/5 dc v = 20v r = 62.5c/w square wave r thja fig.14 - maximum allowable ambient temp. vs. forward current forward voltage drop - v f (v)
IRF7322D1 www.irf.com 7 so-8 package details k x 45 c 8x l 8x q h 0.25 (.010) m a m a 0.10 (.004) b 8x 0.25 (.010) m c a s b s - c - 6x e - b - d e - a - 8 7 6 5 1 2 3 4 5 6 5 recommended footprint 0.72 (.028 ) 8x 1.78 (.070) 8x 6.46 ( .255 ) 1.27 ( .050 ) 3x dim inch es m illim et ers m in m a x m in m ax a .0532 .0688 1.35 1.75 a1 .0040 .0098 0.10 0.25 b .014 .018 0.36 0.46 c .0075 .0098 0.19 0.25 d .189 .196 4.80 4.98 e .150 .157 3.81 3.99 e .050 ba sic 1.27 b asic e1 .025 ba sic 0.635 b as ic h .2284 .2440 5.80 6.20 k .011 .019 0.28 0.48 l 0.16 .050 0.41 1.27 q 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m-1982. 2. controlling dimension : inch. 3. d im en sion s a re sh ow n in millime te r s (in c he s). 4. ou tlin e con f orm s to jed e c ou tline ms -012aa . dimension does not include mold protrusions mold p r otr u sions n ot to exce ed 0.25 (.006). d ime ns ion s is th e le n gth of lea d for solde r in g to a su b stra te.. 5 6 a1 e1 q part marking
IRF7322D1 8 www.irf.com 330.00 (12.992) m ax . 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline confo rms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are show n in millimeters(inches). 3. outline conforms to eia-481 & eia-541. tape and reel world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 221 8371 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice . 3/99
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